This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …

Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to
improve thermal management in lateral devices; however, engineering challenges remain …

Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …

The higher critical electric field of β-gallium oxide (Ga 2 O 3) gives promise to the
development of next generation power electronic devices with improved size, weight, power …

As semiconductor devices based on silicon reach their intrinsic material limits, compound
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …

Abstract 2D materials, specifically transition metal dichalcogenides (TMDs), have gained
massive attention for their potential use in high-integration memory technologies due to their …