Two-dimensional materials for next-generation computing technologies

C Liu, H Chen, S Wang, Q Liu, YG Jiang… - Nature …, 2020 - nature.com
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Hexagonal boron nitride for next‐generation photonics and electronics

S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi… - Nature …, 2023 - nature.com
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …

Recent advances in 2D material theory, synthesis, properties, and applications

YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi… - ACS …, 2023 - ACS Publications
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of
emergent 2D systems. Here, we review recent advances in the theory, synthesis …

2D materials for spintronic devices

EC Ahn - npj 2D Materials and Applications, 2020 - nature.com
Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

Scalable energy-efficient magnetoelectric spin–orbit logic

S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu… - Nature, 2019 - nature.com
Since the early 1980s, most electronics have relied on the use of complementary metal–
oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation …

Two-dimensional semiconductors for transistors

M Chhowalla, D Jena, H Zhang - Nature Reviews Materials, 2016 - nature.com
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …

Synthesis and applications of III–V nanowires

E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Electronics based on two-dimensional materials

G Fiori, F Bonaccorso, G Iannaccone, T Palacios… - Nature …, 2014 - nature.com
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao… - ACS …, 2015 - ACS Publications
Two-dimensional layered semiconductors present a promising material platform for band-to-
band-tunneling devices given their homogeneous band edge steepness due to their …