Atomistic insights into ultrafast SiGe nanoprocessing
G Calogero, D Raciti, D Ricciarelli… - The Journal of …, 2023 - ACS Publications
Controlling ultrafast material transformations with atomic precision is essential for future
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase …
Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys
The properties of liquid Si–Ge binary systems under melting conditions deviate from those
expected by the ideal alloy approximation. Particularly, a nonlinear dependence of the …
expected by the ideal alloy approximation. Particularly, a nonlinear dependence of the …
Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant
33 nm thick silicon on insulator films were implanted with boron at high dose (1.5× 10 16 or
2.5× 10 16 at/cm 2) and low energy (3 or 4 keV), then further annealed with 160 ns laser …
2.5× 10 16 at/cm 2) and low energy (3 or 4 keV), then further annealed with 160 ns laser …
[HTML][HTML] Evolution of the liquid/solid interface roughness in Si1-xGex layers processed by nanosecond laser annealing
Pulsed laser annealing is a relevant alternative to conventional thermal processes for future
technology nodes as it enables the application of a fast and local thermal budget. Such high …
technology nodes as it enables the application of a fast and local thermal budget. Such high …
[HTML][HTML] Nonequilibrium electronic properties and stability consequences in metallic crystalline binary alloys under ultrafast laser excitation
D Iabbaden, A Tsaturyan, JM Raulot… - Journal of Alloys and …, 2025 - Elsevier
This study undertakes an exhaustive exploration of properties under electron-phonon
nonequilibrium for a series of ten industrially pertinent crystalline alloys, namely AlCu, AlNi …
nonequilibrium for a series of ten industrially pertinent crystalline alloys, namely AlCu, AlNi …
Laser Annealed Two Dimensional SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique,
particularly when tightly controlled heating and melting are necessary. In the realm of …
particularly when tightly controlled heating and melting are necessary. In the realm of …
Laser‐Annealed SiO2/Si1−xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
Ultraviolet nanosecond laser annealing (UV‐NLA) proves to be an important technique,
particularly when tightly controlled heating and melting are necessary. In the realm of …
particularly when tightly controlled heating and melting are necessary. In the realm of …