Modeling and simulation of the influence of quantum dots density on solar cell properties

M Jaouane, A Fakkahi, A Ed-Dahmouny… - The European Physical …, 2023 - Springer
Based on the finite element method using the FEniCS computing platform and python
programming, we solve the Schrödinger equation within the effective mass approximation …

Temperature-related photovoltaic characteristics of (In, Ga) N single-intermediate band quantum well solar cells for different shapes

H Abboudi, H El Ghazi, F Benhaddou… - Physica B: Condensed …, 2022 - Elsevier
In this study, we explore the effects of several types of confinement potential on the
photovoltaic conversion properties of a single-intermediate band solar cell based on (In, Ga) …

Indium content, doping and thickness related impacts on nonpolar (In, Ga) N solar cell performance: Numerical investigation

H El Ghazi, YE Ramazan - Solid State Communications, 2023 - Elsevier
Analytical model to evaluate the photovoltaic performance via the short circuit current
density, open circuit voltage, fill factor, and efficiency of nonpolar (In, Ga) N solar cells at …

Excellent properties of cylindrical quantum dots for the design of hot-carrier assisted IBSCs with appropriate ESCs

H Heidarzadeh, A Rostami, M Dolatyari - Optical and Quantum Electronics, 2022 - Springer
In this research work, hot carrier assisted intermediate band solar cells consisting of an
absorber based on cylindrical silicon quantum dots (CQDs) with appropriate energy …

[HTML][HTML] Tuning Intermediate Band Solar Cell Efficiency: The Interplay of Electric Fields, Composition, Impurities, and Confinement

H Abboudi, R En-Nadir, MA Basyooni-M. Kabatas… - Nanomaterials, 2024 - mdpi.com
In this study, we investigated the influence of structural parameters, including active region
dimensions, electric field intensity, In-composition, impurity position, and potential profiles …

[HTML][HTML] Enhancing the Photovoltaic Efficiency of In0.2Ga0.8N/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic Fields

H Abboudi, R En-Nadir, MA Basyooni-M. Kabatas… - Materials, 2024 - mdpi.com
This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN
quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence …

Boosting Photovoltaic Efficiency in Double Quantum Well Intermediate Band-Solar Cells through Impurity Positioning

AE Obispo, C Zuñiga Vargas, WC Algoner - Energies, 2023 - mdpi.com
The photovoltaic conversion efficiency of a single-intermediate band solar cell that
incorporates a double quantum well structure consisting of GaAs/InAs/GaAs/InAs/GaAs …

The Impurity States in Different Shaped InxGa1-xAs/GaAs Quantum Wells under the Influence of Temperature and Hydrostatic Pressure

M Hu, H Yao - Journal of Superconductivity and Novel Magnetism, 2024 - Springer
In this study, the influence of temperature and hydrostatic pressure on impurity states in In x
Ga1-x As/GaAs quantum wells (QWs) with different shapes, including square, parabolic, and …

Preparation and properties of Si/Ni intermediate band photovoltaic materials

P Wang, J Yuan, J Xiao, Z Meng, X Deng, H Huang… - Applied Physics A, 2021 - Springer
The intermediate band solar cell (IBSC) is one of the third-generation photovoltaic devices,
whose theoretical conversion efficiencies can exceed the limit of Shockley and Queisser …

Tuning Intermediate Band Solar Cell Efficiency

H Abboudi, R En-nadir, MA Basyooni-M Kabatas… - 2024 - repository.tudelft.nl
In this study, we investigated the influence of structural parameters, including active region
dimensions, electric field intensity, In-composition, impurity position, and potential profiles …