Reinventing high performance computing: challenges and opportunities
The world of computing is in rapid transition, now dominated by a world of smartphones and
cloud services, with profound implications for the future of advanced scientific computing …
cloud services, with profound implications for the future of advanced scientific computing …
Hpc forecast: Cloudy and uncertain
HPC Forecast: Cloudy and Uncertain Page 1 Today, that economic and technological
influence has increasingly shifted to smartphone and cloud service companies. Moreover …
influence has increasingly shifted to smartphone and cloud service companies. Moreover …
Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices
The gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device
architecture due to its superior gate controllability compared to that of the conventional …
architecture due to its superior gate controllability compared to that of the conventional …
Design and simulation of vertically-stacked nanowire transistors at 3 nm technology nodes
Abstract Gate-all-around (GAA) cylindrical Si channel nanowire field-effect transistor (NW-
FET) devices have the potential to replace FinFETs in future technology nodes because of …
FET) devices have the potential to replace FinFETs in future technology nodes because of …
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology
RR Thakur, N Chaturvedi - Semiconductor Science and …, 2021 - iopscience.iop.org
Nanowires, due to their unique properties, are emerging as the building blocks of the next-
generation electronics industry and will play a critical role in both low-and high-performance …
generation electronics industry and will play a critical role in both low-and high-performance …
Evaluation of nanosheet and forksheet width modulation for digital IC design in the sub-3-nm era
In this article, we provide a comprehensive evaluation of width modulation capabilities of
both nanosheet (NS) and forksheet (FS) devices, going from device level to a block level …
both nanosheet (NS) and forksheet (FS) devices, going from device level to a block level …
Analysis of Nanosheet Field Effect Transistor (NSFET) for device and circuit perspective
This paper presents an analysis of Nanosheet Field Effect Transistor (NSFET) and Nanowire
FET for device and circuit perspective with 7nm channel length. While simulating the above …
FET for device and circuit perspective with 7nm channel length. While simulating the above …
Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications
RR Thakur, N Chaturvedi - Nano, 2021 - World Scientific
In this paper, design and parameter optimization for the performance analysis of a Gate-All-
Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out …
Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out …
Ohmic contact to monolayer semiconductors
PC Shen - 2020 - dspace.mit.edu
Finally, we provide a deeper understanding of the ohmic contact nature at metal-monolayer
semiconductor interfaces and propose a new contact paradigm, gap-state saturation, to …
semiconductor interfaces and propose a new contact paradigm, gap-state saturation, to …
IEEE copyright form
MZ Baten, MA Kumar, A Padovani, L Larcher… - ieeexplore.ieee.org
The IEEE distributes its technical publications throughout the world and wants to ensure that
the material submitted to its publications is properly available to the readership of those …
the material submitted to its publications is properly available to the readership of those …