Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

V Orejuela, E García‐Tabares… - Advanced Electronic …, 2024 - Wiley Online Library
Germanium is reemerging as a prominent material in the semiconductor field, particularly for
electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination …

Characterization of nanoscale atomic motion of Si in polycrystalline Cu layer

V Takáts, E Bodnár, Y Kaganovskii, T Fodor, J Hakl… - Heliyon, 2024 - cell.com
Atomic migration of silicon through grain boundaries of a thin polycrystalline Cu film and
island formation on the Cu surface were studied in the temperature range of 403–520 K …

Diffusion induced atomic islands on the surface of Ni/Cu nanolayers

V Takáts, A Csik, J Hakl, K Vad - Applied Surface Science, 2018 - Elsevier
Surface islands formed by grain-boundary diffusion has been studied in Ni/Cu nanolayers
by in-situ low energy ion scattering spectroscopy, X-ray photoelectron spectroscopy …

Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis

SD Al Ghamdi, AOM Alzahrani, N Sobahi… - Semiconductor …, 2023 - iopscience.iop.org
In the present work we investigate the influence of deposition sequences on the two layers
forming a CuO/Zinc oxide (ZnO) heterojunction. Both layers are prepared using the simple …

Ti oxidation states in Zn (Ti) coating of hot-dip galvanized steels

V Takáts, J Hakl, A Csik, HF Bereczki, G Lévai… - Surface and Coatings …, 2017 - Elsevier
Chemical composition analysis of coloured surface layers of hot-dip galvanized steel sheets
was studied. Samples were produced in laboratory scale and studied by mass spectrometry …

Improved photoluminescence properties of red YVO4: Eu3+ thin films deposited by laser ablation: Influence of deposition time

FB Dejene - Inorganic Chemistry Communications, 2022 - Elsevier
Abstract YVO4: Eu 3+ thin films were deposited at room temperature, using pulse laser
deposition with deposition time ranging from 30, 45, and 60 min. The oxygen deposition …

First-Principles Calculations of Band Offsets at Heterovalent - Interfaces

G Greene-Diniz, M Grüning - Physical Review Applied, 2018 - APS
First-principles electronic-structure calculations are carried out to investigate the band
alignments of tensile-strained (001) Ge interfaced with (001) In x Al 1− x As. The sensitivities …

[PDF][PDF] Nanoskálájú atomi mozgások vizsgálata Cu/Si vékonyfilmekben

B Eszter, V Kálmán - dea.lib.unideb.hu
Tanúsítom, hogy Bodnár Eszter doktorjelölt 2018-2024 között a fent megnevezett Doktori
Iskola Szilárdtestfizika és Anyagtudományi programjának keretében irányításommal végezte …

[PDF][PDF] First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys

JCC de Abreu - 2020 - pure.qub.ac.uk
The use of technology is important in our daily life, it make our tasks more efficient and
faster. The computers and mobile phones are devices that are an important factor in our …

Hydrogen diffusion barrier for hybrid semiconductor growth

A Maros, F Suarez, J Thorp, M Sheldon… - US Patent 10,991,835, 2021 - Google Patents
Semiconductor devices and methods of fabricating semicon ductor devices having a dilute
nitride active layer and at least one semiconductor material overlying the dilute nitride active …