An improved equivalent circuit model of SiC MOSFET and its switching behavior predicting method
X Li, F Xiao, Y Luo, R Wang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Wide-bandgap (WBG) power devices have better dynamic characteristics and higher
working temperatures compared to traditional Si devices and are more suitable for high …
working temperatures compared to traditional Si devices and are more suitable for high …
[PDF][PDF] The method of the sic mosfet replacing the si igbt in the traditional power electronics converter without redesigning the main circuit and the driver circuit
L Zhang, D Yang, L Ren, Y Cheng, Y Yuan - Energy Eng, 2021 - cdn.techscience.cn
As a wide bandgap power electronics device, the SiC MOSFET has a lot of advantages over
the traditional Si IGBT. Replacing the Si IGBT with the SiC MOSFET in the existing power …
the traditional Si IGBT. Replacing the Si IGBT with the SiC MOSFET in the existing power …
[PDF][PDF] Reliability Analysis of Planar and Symmetrical & Asymmetrical Trench Discrete SiC Power MOSFETs
J Yang - 2023 - research-information.bris.ac.uk
With the introduction of Silicon Carbide (SiC) technology, SiC power Metal-oxide Field Effect
Transistors (MOSFETs) have become a potential alternative to Silicon Insulated Gate Bipolar …
Transistors (MOSFETs) have become a potential alternative to Silicon Insulated Gate Bipolar …
Estimation of lumped equivalent circuit elements of a SiC power module
D Reiff, A Rothstein, J Feng, J Shang… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
This paper describes a procedure for determining parasitic inductances in a power module
using frequency domain analysis, focusing on the current path and the resulting in …
using frequency domain analysis, focusing on the current path and the resulting in …
Characterization of the delay and transfer function of measurement equipment for SiC–power semiconductors
D Reiff, J Feng, J Shang… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
This paper introduces and compares methods to estimate the delay and transfer function of
measurement equipment. The characterization is performed both in time and frequency …
measurement equipment. The characterization is performed both in time and frequency …
Short-circuit-current protection of SiC power MosFet including characterization by measurement
D Reiff, S Xie, W Mei, V Staudt - PCIM Europe digital days 2020 …, 2020 - ieeexplore.ieee.org
Short circuit measurements always introduce special challenges to the measurement setup
and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very low DC …
and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very low DC …