Growth of high-quality single-crystalline InSb layers remains challenging in material science.
Such layered InSb materials are highly desired for searching for and manipulation of …

Optical carrier incubation can effectively alter the electron transport properties of
semiconductors; thus, optical switching of the plasmonic response of the semiconductor …

Dislocation filtering by interfaces between Al x In 1− x Sb and Al y In 1− y Sb layers grown on
a GaAs (001) substrate has been investigated. Transmission electron microscopy analysis …

Among the experimental realization of fault-tolerant topological circuits are interconnecting
nanowires with minimal disorder. Out-of-plane indium antimonide (InSb) nanowire networks …

We have examined the formation and evolution of irradiation-induced nanorod (NR) growth
through a comparison of focused-ion-beam irradiation of InSb wafers and InSb/GaAs …

Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-
infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an …

We have investigated the effect of micro-twin defects on InSb quantum wells (QWs) grown
on GaAs (001) substrates. Transmission electron microscopy analysis revealed that the QW …

The relationship between growth temperature and the formation of periodic interfacial misfit
(IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was …

The effect of structural defects on electron mobilities has been investigated in InSb quantum
wells (QWs) grown on GaAs (001) substrates. The usefulness of a⟨ 116⟩-directional …

Medium wavelength infrared (MWIR) detectors are of increasing importance in defense,
security, commercial, and environmental applications. Enhanced integration will lead to …