Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
A roadmap for electronic grade 2D materials
Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific
and industrial promise, providing a broad materials platform for scientific investigation, and …
and industrial promise, providing a broad materials platform for scientific investigation, and …
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs)
such as WS2 requires epitaxial growth and coalescence of oriented domains to form a …
such as WS2 requires epitaxial growth and coalescence of oriented domains to form a …
Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers
Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting
properties and versatile material chemistry that are promising for device miniaturization …
properties and versatile material chemistry that are promising for device miniaturization …
Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current
Q Smets, G Arutchelvan, J Jussot… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
We show that downscaling the top-contact length to 13nm induces no penalty on the
electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different …
electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different …
TFT channel materials for display applications: From amorphous silicon to transition metal dichalcogenides
As the need for super‐high‐resolution displays with various form factors has increased, it
has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable …
has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable …
Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics
In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one
of the most enticing, industry-compatible templates to realize manufacturable deposition of …
of the most enticing, industry-compatible templates to realize manufacturable deposition of …
Carbon Incorporation in MOCVD of MoS2 Thin Films Grown from an Organosulfide Precursor
CM Schaefer, JM Caicedo Roque, G Sauthier… - Chemistry of …, 2021 - ACS Publications
With the rise of two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors
and their prospective use in commercial (opto) electronic applications, it has become key to …
and their prospective use in commercial (opto) electronic applications, it has become key to …
Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling
W Mortelmans, S De Gendt, M Heyns… - Applied Materials …, 2021 - Elsevier
The application of new materials in nanotechnology opens new perspectives and enables
ground-breaking innovations. Two-dimensional van der Waals (vdW) materials and more …
ground-breaking innovations. Two-dimensional van der Waals (vdW) materials and more …
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
B Groven, A Nalin Mehta, H Bender… - Chemistry of …, 2018 - ACS Publications
When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten
disulfide (WS2) are grown by atomic layer deposition (ALD) for atomic growth control at low …
disulfide (WS2) are grown by atomic layer deposition (ALD) for atomic growth control at low …