Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …

Standard thermoreflectance-based measurements have been routinely taken on thin metal
transducer (Au or Al) deposited samples. This is based on the fundamental hypothesis that …

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations
located either below or above the interfaces in InGaN/GaN structures deposited along the …

Temperature is always of fundamental importance in various microscopic systems ranging
from solid state nano-devices physics, chemical micro-reactions and biological cells. As …

We report on the characterization and analysis of a GaN-based distributed feedback laser
diode (DFB-LD) with 3 rd-order laterally etched sidewall gratings centered at a wavelength …

Temperature rise during operation is a central concern of semiconductor lasers and
especially difficult to measure during a pulsed operation. We present a technique for in situ …

This paper presents the results of the analysis of thermal processes and degradation
mechanisms in semiconductor devices: semiconductor lasers, quantum cascade lasers …

In this work we show that elastic relaxation of lateral free surfaces of InGaN epilayer may
induce plastic deformation of adjacent GaN resulted in introduction of a-type dislocations …

The thermal modeling for 1.55 μm InGaN based quantum-well heterostructure lasers is
presented. The power conversion efficiency, output light power, and their temperature …