Interface lattice displacement measurement to 1 pm by geometric phase analysis on aberration-corrected HAADF STEM images
In this work, the accuracy of geometric phase analysis (GPA) on aberration-corrected high-
angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF …
angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF …
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron …
JM Chauveau, Y Androussi, A Lefebvre… - Journal of applied …, 2003 - pubs.aip.org
We propose a method to determine the indium concentrations x and y in the In y Al 1− y
As/In x Ga 1− x As metamorphic structures. This approach is based on the combination of …
As/In x Ga 1− x As metamorphic structures. This approach is based on the combination of …
Numerical simulation of TEM images for In (Ga) As/GaAs quantum dots with various shapes
A Maltsi, T Niermann, T Streckenbach… - Optical and Quantum …, 2020 - Springer
We present a mathematical model and a tool chain for the numerical simulation of TEM
images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the …
images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the …
Assessment of the strain depth sensitivity of moire sampling scanning transmission electron microscopy geometrical phase analysis through a comparison with dark …
In this study, the Moiré sampling Scanning Transmission Electron Microscopy Geometrical
Phase Analysis (or STEM Moiré GPA) strain characterization method is compared to the well …
Phase Analysis (or STEM Moiré GPA) strain characterization method is compared to the well …
Measurement of local strain
C Gammer, MI Richard, C Eberl - MRS Bulletin, 2019 - cambridge.org
Functional and mechanical properties of modern devices are directly controlled by the stress
and strain state acting on the materials within. For manufacturers, elastic strain engineering …
and strain state acting on the materials within. For manufacturers, elastic strain engineering …
Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical composition
K Leifer, PA Buffat, J Cagnon, E Kapon, A Rudra… - Journal of crystal …, 2002 - Elsevier
A quantitative approach of electron microscopy is developed to measure local concentration
and strain in quantum structures obtained by hetero-epitaxy of III–V alloys. Quantitative …
and strain in quantum structures obtained by hetero-epitaxy of III–V alloys. Quantitative …
Effect of sample bending on diffracted intensities observed in CBED patterns of plan view strained samples
F Houdellier, D Jacob, MJ Casanove, C Roucau - Ultramicroscopy, 2008 - Elsevier
Convergent beam electron diffraction is used to study the effect of the sample bending on
diffracted intensities as observed in transmission electron microscopy (TEM). Studied …
diffracted intensities as observed in transmission electron microscopy (TEM). Studied …
Reduction of density of subgrain boundaries and misfit dislocations in epitaxial (001) thin films: Effect on dielectric tunability
L Ryen, X Wang, P Petrov, E Carlsson… - Journal of applied …, 1999 - pubs.aip.org
The effect of a YBa 2 Cu 3 O 7− x buffer layer on the quality of rf magnetron sputtered
epitaxial (001) SrTiO 3 thin films on a LaAlO 3 substrate has been investigated using high …
epitaxial (001) SrTiO 3 thin films on a LaAlO 3 substrate has been investigated using high …
TEM analysis of the container effect of Au‐based catalyst droplets during vapour‐liquid‐solid growth of axial ZnTe/CdTe nanowires
Axial heterostructure nanowires (NWs) of ZnTe/CdTe were grown by vapour‐liquid‐solid
growth realized in a molecular beam epitaxial chamber. By alternative supply of Zn or Cd …
growth realized in a molecular beam epitaxial chamber. By alternative supply of Zn or Cd …
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED
Using a combination of the CBED and the LACBED techniques in the transmission electron
microscopy (TEM), we have investigated the strain field in the silicon active region of a …
microscopy (TEM), we have investigated the strain field in the silicon active region of a …