On the zero-field quantization of the anomalous quantum Hall effect in two-dimensional moiré layers
S Das Sarma, M Xie - Physical Review B, 2024 - APS
In recent breakthrough experiments, twisted moiré layers of transition-metal dichalcogenides
are found to manifest both integer and fractional quantum anomalous Hall effects in zero …
are found to manifest both integer and fractional quantum anomalous Hall effects in zero …
Fractional quantum Hall effect at the filling factor
The fractional quantum Hall (FQH) effect at the filling factor $\nu= 5/2$ was discovered in
GaAs heterostructures more than 35 years ago. Various topological orders have been …
GaAs heterostructures more than 35 years ago. Various topological orders have been …
Gate tuning of fractional quantum Hall states in an InAs two-dimensional electron gas
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional
electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar …
electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar …
On the zero-field quantization of the anomalous quantum Hall effect in moir\'e 2D layers
In recent breakthrough experiments, twisted moir\'e layers of transition metal
dichalcogenides are found to manifest both integer (IQAHE) and fractional (FQAHE) …
dichalcogenides are found to manifest both integer (IQAHE) and fractional (FQAHE) …
High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
EA Bergeron, F Sfigakis, A Elbaroudy… - Applied Physics …, 2024 - pubs.aip.org
We report on transport characteristics of field effect two-dimensional electron gases (2DEGs)
in 24 nm wide indium arsenide surface quantum wells. High quality single-subband …
in 24 nm wide indium arsenide surface quantum wells. High quality single-subband …
Development of III-V Semiconductor Surface Quantum Wells for Hybrid Superconducting Device Applications
E Bergeron - 2024 - uwspace.uwaterloo.ca
This thesis concerns the materials development of both InSb/InAlSb and InAs/AlGaSb
surface quantum wells: Two of the most promising platforms for the study of proximity …
surface quantum wells: Two of the most promising platforms for the study of proximity …