Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran… - Applied Physics …, 2004 - pubs.aip.org
The effect of excess C incorporation on the deep level spectrum of n-type GaN grown by
metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth …
metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth …
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
The impact of C incorporation on the deep level spectrum of n-type and semi-insulating
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
GaN: C: Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was …
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
N-Schottky and p–n GaN junctions are currently used for different technologies. A
comparison of the deep levels found throughout the entire band gap of n-GaN grown by …
comparison of the deep levels found throughout the entire band gap of n-GaN grown by …
Hydrogen passivation of deep levels in
Differential postgrowth hydrogen passivation of deep levels in n–GaN grown by metal-
organic chemical vapor deposition has been directly observed by means of both deep level …
organic chemical vapor deposition has been directly observed by means of both deep level …
Electrical characterization of n-type Al0. 30Ga0. 70N Schottky diodes
The carrier trapping properties and current transport behavior of Ni/n-Al 0.30 Ga 0.70 N
Schottky diodes were quantitatively characterized by a combination of deep level optical …
Schottky diodes were quantitatively characterized by a combination of deep level optical …
Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level …
Quantitative measurements of interface state density and energy distribution profiles within
Al 2 O 3/GaN interfaces were obtained by constant capacitance deep level transient …
Al 2 O 3/GaN interfaces were obtained by constant capacitance deep level transient …
Metalorganic chemical vapor deposition gallium nitride with fast growth rate for vertical power device applications
The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low
controllable doping, and high mobility is key for vertical high‐power devices. Herein, the …
controllable doping, and high mobility is key for vertical high‐power devices. Herein, the …
[HTML][HTML] Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors
AM Armstrong, B Klein, AA Allerman… - Journal of Applied …, 2018 - pubs.aip.org
Visible-and solar-blind detection was demonstrated using Al 0.45 Ga 0.55 N/Al 0.30 Ga 0.70
N and Al 0.85 Ga 0.25 N/Al 0.70 Ga 0.30 N high electron mobility transistors (HEMTs) …
N and Al 0.85 Ga 0.25 N/Al 0.70 Ga 0.30 N high electron mobility transistors (HEMTs) …
Study of defect properties and recombination mechanism in rubidium treated Cu (In, Ga) Se2 solar cells
H Tangara, S Zahedi-Azad, J Not, J Schick… - Journal of Applied …, 2021 - pubs.aip.org
Heavy alkali-metal treatment of Cu (In, Ga) Se 2 (CIGSe) absorbers has been emerging as a
key process for achieving over 23% high conversion efficiencies in CIGSe solar cells. Here …
key process for achieving over 23% high conversion efficiencies in CIGSe solar cells. Here …
Quantitative observation and discrimination of AlGaN-and GaN-related deep levels in AlGaN∕ GaN heterostructures using capacitance deep level optical …
A Armstrong, A Chakraborty, JS Speck… - Applied physics …, 2006 - pubs.aip.org
Deep levels were observed using capacitance deep level optical spectroscopy (DLOS) in an
Al Ga N∕ Ga N heterostructure equivalent to that of a heterojunction field effect transistor …
Al Ga N∕ Ga N heterostructure equivalent to that of a heterojunction field effect transistor …