(57) ABSTRACT A method of bonding includes using a bonding layer having a fluorinated
oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine …

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine
may be introduced into the bonding layer by exposure to a fluorine-containing solution …

A method for the preparation of anatase TiO2, which is stable to a temperature as high as
900° C, without using any complex cationic dopants is presented. The synthetic procedure …

The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

Heterogeneous integration of indium phosphide (InP) onto the Si platform via plasma-
activated bonding enables efficient evanescent coupling with lower dislocation density …

Fused-silica glass, as a desirable material with rigidity, biological inertness, and favorable
light transmission for nanofluidic devices, should be assembled via low-temperature …

Room temperature covalent bonds between bonded silicon oxide layers can be realized by
forming surface and subsurface absorption layers followed by terminating outmost bonding …

We demonstrate a facile bonding method for combining Si/Si, Si/quartz, and quartz/quartz
wafers at room temperature (∼ 25 C) using a one-step O 2/CF 4/H 2 O plasma treatment …

An ab initio approach with the density functional theory (DFT) method was used to study F
atom interactions with organosilicate glass (OSG)-based low-k dielectric films. Because of …

Organosilicon thin films issued from the gas mixture of oxygen and hexamethyledisiloxane
(HMDSO), 2, 4, 6, 8-tetramethylcyclotetrasiloxane (TMCTS), or fluorotriethoxysilane (FTEOS) …