Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
This work demonstrates a high-performance monolithically integrated GaN inverters
platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) …
platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) …
1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure
N Sun, R Wang, H Huang, Y Lei, J Dai, R Han… - Applied Physics …, 2024 - pubs.aip.org
This Letter demonstrates a 1500-V enhancement-mode (E-mode) GaN-based high electron
mobility transistors (HEMTs) based on the recessed-free structure. The E-mode GaN-based …
mobility transistors (HEMTs) based on the recessed-free structure. The E-mode GaN-based …
Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
In this study, high-performance InAlN/GaN metal-insulator-semiconductor high electron
mobility transistors (MIS-HEMTs) are fabricated using HfAlO x-based charge-trapping layer …
mobility transistors (MIS-HEMTs) are fabricated using HfAlO x-based charge-trapping layer …
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
In this work, high threshold voltage and breakdown voltage E-mode GaN HEMTs using an
Al: HfO x-based charge trapping layer (CTL) are presented. The developed GaN HEMTs …
Al: HfO x-based charge trapping layer (CTL) are presented. The developed GaN HEMTs …
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
This work develops a regrown fishbone trench (RFT) structure in selective area growth
(SAG) technique to fabricate recessed-gate normally off GaN metal–insulator …
(SAG) technique to fabricate recessed-gate normally off GaN metal–insulator …
Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure
H Zhang, S Huang, F Guo, K Deng… - … status solidi (b), 2024 - Wiley Online Library
The ultrathin‐barrier (UTB) AlGaN/GaN heterostructure exhibits great promise as a
technology for manufacturing high‐performance normally OFF GaN metal–insulator …
technology for manufacturing high‐performance normally OFF GaN metal–insulator …