In this study, we fabricate and characterize a Ti/TiO2/Si device with different dopant
concentrations on a silicon surface for neuromorphic systems. We verify the device stack …

Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …

Sneak path current generated by adjacent cells in three-dimensional (3D) memristor arrays
must be curbed while securing the multi-bit storage capability of each cell to aid in the cost …

We investigated the short-term memory characteristics of n-type-ZnO/p-type-NiO
heterojunction-based memristor devices to achieve a reservoir computing system. The …

Finding an inexpensive and scalable method for the mass production of memristors will be
one of the key aspects for their implementation in end-user computing applications. Herein …

Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were
manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer …

Abstract In this work, Pt/Ni 0.5 Zn 0.5 Fe 2 O 4/Pt (Pt/NZFO/Pt) sandwich structure material
with different NZFO film thicknesses were synthesised on an Al 2 O 3 substrate using the …

The latest progresses in software engineering such as cloud computing, big data analysis,
and machine learning have accelerated the emergence of advanced intelligent systems …

In this work, the impact of different HfO 2/Al 2 O 3-based multilayer dielectric stack (DS)
configurations on the electrical characteristics and on the resistive switching (RS) …

To effectively solve the crosstalk issue in high-density crossbar array (CBA), high rectifying
characteristics should be introduced in the resistance random-access memory (ReRAM) …