Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Filament growth and resistive switching in hafnium oxide memristive devices

S Dirkmann, J Kaiser, C Wenger… - ACS applied materials …, 2018 - ACS Publications
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …

Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming

S Poblador, MB Gonzalez, F Campabadal - Microelectronic Engineering, 2018 - Elsevier
Multilevel states are clearly distinguished in TiN/Ti/HfO 2/W RRAM devices by programming
sequential voltage ramps and trains of pulses. It has been shown that the filamentary …

Data-driven RRAM device models using Kriging interpolation

I Hossen, MA Anders, L Wang, GC Adam - Scientific Reports, 2022 - nature.com
A two-tier Kriging interpolation approach is proposed to model jump tables for resistive
switches. Originally developed for mining and geostatistics, its locality of the calculation …

Modeling framework and comparison of memristive devices and associated STDP learning windows for neuromorphic applications

F Zayer, W Dghais, H Belgacem - Journal of Physics D: Applied …, 2019 - iopscience.iop.org
This paper presents a comparative synthesis of the suitability of three memristive device
technologies and their corresponding spike-timing-dependent plasticity (STDP) learning …

Phenomenological modeling of memristive devices

F Merrikh Bayat, B Hoskins, DB Strukov - Applied Physics A, 2015 - Springer
We present a computationally inexpensive yet accurate phenomenological model of
memristive behavior in titanium dioxide devices by fitting experimental data. By design, the …

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Resistive Random Access Memory

KH Xue, B Traore, P Blaise… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2/Pt
resistive random access memories are due to HfO x suboxides, possibly tetragonal, where …

KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices

E Abbaspour, S Menzel, A Hardtdegen… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a physical model to investigate the electroforming, set and reset
processes in Redox-based resistive switching RAM based on the valence change …

A SPICE compact model for unipolar RRAM reset process analysis

F Jiménez-Molinos, MA Villena… - … on Electron Devices, 2015 - ieeexplore.ieee.org
A physically based circuit model is proposed for SPICE simulation of thermally assisted reset
transitions in resistive switching devices. The model allows the simulation of conductive …

In-gap states and band-like transport in memristive devices

C Baeumer, C Funck, A Locatelli, TO Mentes… - Nano …, 2018 - ACS Publications
Point defects such as oxygen vacancies cause emergent phenomena such as resistive
switching in transition-metal oxides, but their influence on the electron-transport properties is …