Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

T Lim, JH Lee, D Kim, J Bae, S Jung… - Advanced …, 2024 - Wiley Online Library
Abstract In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐
generation memory device because of its outstanding electrical properties. However, the …

Synergistic γ‐In2Se3@rGO Nanocomposites with Beneficial Crystal Transformation Behavior for High‐Performance Sodium‐Ion Batteries

Y Zhao, H Zhang, Y Li, C Ma, W Tian, X Qi… - Advanced …, 2023 - Wiley Online Library
Crystal transformation of metal compound cathodes during charge/discharge processes in
alkali metal‐ion batteries usually generates profound impact on structural stability and …

Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties

Y Hase, V Sharma, M Prasad, R Aher… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for
photodetector applications due to its excellent photoresponse and superior stability under …

Low-temperature NO2 sensor based on γ-In2Se3/In2O3 nanoflower heterojunction

H Xing, X Li, S Sun, B Huang, X Li - Sensors and Actuators B: Chemical, 2024 - Elsevier
Abstract The γ-In 2 Se 3/In 2 O 3 nanoflower-like heterojunctions were synthesized by
solvothermal treatment followed by thermal oxidation in Air. The nanoflower-like γ-In 2 Se …

Enhancing photodetector performance of MoS2 thin films by nitrogen ion irradiation

PT Kolhe, YV Hase, PR Jadhav, VS Ghemud… - Optical Materials, 2024 - Elsevier
In this work, MoS 2 thin films were grown on a Si substrate using RF sputtering, and
subsequently subjected to nitrogen ion irradiation with varying ion fluence. The Raman …

Investigation of In2SexOy/In2Se3/Si dual-junction photodiode for self-powered broadband photodetection

K Li, K Ling, W Li, X Liu - Applied Physics Letters, 2024 - pubs.aip.org
We report a dual-junction strategy for fabricating a high-performance In 2 Se x O y/In 2 Se
3/Si heterojunction photodiode by oxidizing the epitaxial In 2 Se 3 thin films. The device …

Enhanced performance of γ-In2Se3 photodetector on ITO-coated interdigital electrodes fabricated via RF-magnetron sputtering

Y Hase, M Prasad, S Shah, V Doiphode… - Journal of Materials …, 2024 - Springer
In this study, we investigated the effect of RF sputtering power on the structural,
morphological, optical, and photodetector properties of γ-In2Se3 thin films. The In2Se3 films …

Investigating the influence of RF power on the photo-detection capabilities of SnS thin films fabricated via RF magnetron sputtering

AS Pathan, YV Hase, AS Landge, SR Jadkar… - Journal of Materials …, 2024 - Springer
Tin sulfide (SnS) thin films were prepared using radio-frequency (RF) magnetron sputtering
at varying RF sputtering power. The influence of RF power on the structural, optical …

Unraveling the Properties of Interdigital Electrode-based γ-In2Se3 Photodetectors for Optimal Performance

Y Hase, S Shah, S Ladhane, V Doiphode… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using
the RF-magnetron sputtering method with optimized parameters. The formation of high …

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Y Li, T Chen, Y Ma, Y Hu, L Zhang, X Zhang, J Yang… - Crystals, 2024 - mdpi.com
Oxygen vacancies (V o) can significantly degrade the electrical properties of indium oxide
(In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this …