Breaking the doping limit in silicon by deep impurities
n-type doping in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we …
due to the Fermi-level pinning via defect complexes at high doping concentrations. Here, we …
[HTML][HTML] Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting
Nanosecond pulsed laser melting can be used to rapidly recrystallize ion-implanted Si
through liquid phase epitaxy. The rapid resolidification that follows the melting results in a …
through liquid phase epitaxy. The rapid resolidification that follows the melting results in a …
[HTML][HTML] Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs
S Karner, O Blank, M Rösch, J Zalesak, J Keckes… - Microelectronic …, 2022 - Elsevier
Despite a decisive influence of residual strains in Si on its electronic properties and
mechanical stability, strain distributions in vertical power transistors are still not fully …
mechanical stability, strain distributions in vertical power transistors are still not fully …
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
Heavy doping of Ge is crucial for several advanced micro-and optoelectronic applications,
but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a …
but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a …
Phase evolution of Te-hyperdoped Si upon furnace annealing
Si hyperdoped with chalcogens via ion implantation and pulsed laser melting is known to
exhibit strong room-temperature sub-bandgap photoresponse. As a thermodynamically …
exhibit strong room-temperature sub-bandgap photoresponse. As a thermodynamically …
[HTML][HTML] Tunable magneto-transport properties in ultra-high Bi-doped Si prepared by liquid phase epitaxy
During the past decades, excavating the novel functional materials towards CMOS-
compatible spin-transport devices has been treated as one of the most urgent tasks to …
compatible spin-transport devices has been treated as one of the most urgent tasks to …
Impurity and defect interactions during laser thermal annealing in Ge
The microscopic mechanisms involving dopants, contaminants, and defects in Ge during
pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un …
pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un …
Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon
C Ahn, N Bennett, ST Dunham, NEB Cowern - Physical Review B …, 2009 - APS
We present a general theory of stress effects on the solid solubility of impurities in crystalline
materials, including the effects of ionization and the Fermi level in semiconductors. Critical …
materials, including the effects of ionization and the Fermi level in semiconductors. Critical …
Low-Temperature Selective Si: As Epitaxy
As for selective LT-SiAs. Secondary-ion mass spectroscopy (SIMS) profiles of P and As
diffusion into intrinsic Si (i-Si) for LT-SiP/LT-SiAs/i-Si and LT-SiP/i-Si stacks show> 2× benefit …
diffusion into intrinsic Si (i-Si) for LT-SiP/LT-SiAs/i-Si and LT-SiP/i-Si stacks show> 2× benefit …
Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS–EDX spectroscopy
G Servanton, R Pantel, M Juhel, F Bertin - Micron, 2009 - Elsevier
Field emission gun (FEG) nanoprobe scanning electron transmission microscopy (STEM)
techniques coupled with energy dispersive X-ray (EDX) and electron energy loss …
techniques coupled with energy dispersive X-ray (EDX) and electron energy loss …