Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET),
which is among the most ubiquitous devices in the modern world. As transistors and related …

The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage
operation and lower power consumption, both critical for mobile devices and internet of …

While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device
architecture requirement to achieve next-generation 2D devices, conventional deposition or …

The benefits of O2 plasma exposure at the contact regions of dual-gate MoS2 transistors
prior to metal deposition for high performance electron contacts are studied and evaluated …

We demonstrate dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded
switching performance of multilayer MoS2 can be compensated by the DG structure. It …

2-D electronics is an important pathway to develop advanced monolithic integrated circuits.
Due to the nature of the van der Waals force between 2-D materials and dielectrics, it is a …

In this work, we explore the physics and evaluate the merits of strain engineering in two-
dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT …

The voyage of semiconductor industry to decrease the size of transistors to achieve superior
device performance seems to near its physical dimensional limitations. The quest is on to …

Abstract Recently, molybdenum disulfide (MoS 2), an emerging 2D material, has become an
alternative candidate for ultra-sensitive biosensors due to its semiconducting behavior and …