Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Memristors with excellent scalability have the potential to revolutionize not only the field of
information storage but also neuromorphic computing. Conventional metal oxides are widely …

Nowadays the development of machine vision is oriented toward real-time applications such
as autonomous driving. This demands a hardware solution with low latency, high energy …

Memory devices with high speed and high density are highly desired to address the
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …

Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …

Hexagonal YMnO3 shows a unique improper ferroelectricity induced by structural
trimerization. Extensive research on this system is primarily due to its candidacy for …

In this study, the excellent energy storage performance is achieved by constructing opposite
double‐heterojunction ferroelectricity–insulator–ferroelectricity configuration. The PbZr0 …

Among the recent discoveries of domain wall functionalities, the observation of electrical
conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened …

Ferroelectric capacitive memories have not achieved the commercial success originally
hoped for them in large volume because the area of the capacitors (“footprint”) is too large to …

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a
promising candidate for applications in the next-generation non-volatile memory technology …