Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …
Evolution of total ionizing dose effects in MOS devices with Moore's law scaling
DM Fleetwood - IEEE Transactions on Nuclear Science, 2017 - ieeexplore.ieee.org
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is
strongly gate-length dependent. The current drive decreases during irradiation, and the …
strongly gate-length dependent. The current drive decreases during irradiation, and the …
Modeling ionizing radiation effects in solid state materials and CMOS devices
HJ Barnaby, ML McLain, IS Esqueda… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A comprehensive model is presented which enables the effects of ionizing radiation on bulk
CMOS devices and parasitic structures to be simulated with closed form functions. The …
CMOS devices and parasitic structures to be simulated with closed form functions. The …
Geometry dependence of total-dose effects in bulk FinFETs
<? Pub Dtl=""?> The total ionizing dose (TID) response of bulk FinFETs is investigated for
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
various geometry variations, such as fin width, channel length, and fin pitch. The buildup of …
Characterization of GigaRad total ionizing dose and annealing effects on 28-nm bulk MOSFETs
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad
of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS …
of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS …
Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses
G Borghello, E Lerario, F Faccio, HD Koch… - Microelectronics …, 2021 - Elsevier
We studied the radiation response of 3 different 65 CMOS planar technologies at the ultra-
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
Enhanced Radiation-Induced Narrow Channel Effects in Commercial m Bulk Technology
Total ionizing dose effects are investigated in input/output transistors that are fabricated by
using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel …
using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel …
Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern MOSFETs
GI Zebrev, MS Gorbunov - IEEE Transactions on Nuclear …, 2009 - ieeexplore.ieee.org
A procedure of SPICE parameters extraction for radiation-induced equivalent lumped
parasitic transistor is proposed. Comparison of radiation-induced leakage current in test …
parasitic transistor is proposed. Comparison of radiation-induced leakage current in test …