RF circuit design in deep-submicrometer CMOS technologies relies heavily on accurate
modeling of thermal noise. Based on Nyquist's law, predictive modeling of thermal noise in …

Experimental and simulation results of high-frequency channel noise in MOSFETs with 40-,
80-, and 110-nm gate lengths are presented. The measured dc IV characteristics can be …

Accurate modeling of thermal noise in MOSFETs is crucial for RF application of deep-
submicrometer CMOS technologies. Here, we present RF noise measurements on four …

This chapter tracks how a careful peeling of the proverbial onion, layer by layer, led to
almost an order of magnitude reduction in noise, making the bulk Metal‐Oxide …

This paper presents the equivalent sheet resistance for the intrinsic channel thermal noise of
sub-100-nm MOSFETs for the first time. This newly defined noise sheet resistance is …

Detailed physical understanding of the noise mechanisms that exist in bulk MOS transistors
is developed. These sources of noise consist of the intrinsic fluctuations which are inherent …

Three innovations responsible for an explosive growth in available information bandwidth
over the last 30 years are highlighted. These include the invention of the bipolar and MOS …

Nanoscale RF CMOS Transceiver Design Page 1 Objective LNA Design RF Test Chip FoM for
RFIC Design Thermal Noise LNA Implementation Conclusions Nanoscale RF CMOS …

RF noise performance of PD-SOI MOSFETs at 40 nm gate length is reported. Using drift-
diffusion transport, a good match between small signal measurements and simulations is …

This work extracts RF noise in a 28nm high-k/metal gate RF CMOS technology using a small
signal equivalent circuit. All extrinsic and intrinsic small-signal parameters are extracted from …