A novel 7T carbon nanotube field effect transistor (CNTFET)-based static random-access
memory (SRAM) cell is proposed in this paper. Power and noise margin performances of the …

The design of low power memory cells is the dream of engineers in memory design. A
Darlington-based 8T CNTFET SRAM cell is suggested in this paper. It is called the proposed …

This research paper proposes a low-power, high-stability 8T static random access memory
(SRAM) cell. The proposed SRAM cell is a modified structure of the conventional 6T SRAM …

SRAM is a key component of most embedded systems; it consumes a major portion of total
area as well as total power of the system. As a result, design and stability of SRAM cell has a …

The Static random access memory (SRAM) design is demanding due to the variation of the
process parameters with CMOS technology scaling. It becomes challenging because the …

Continuous scaling of the transistor size and reduction of the operating voltage has led to a
significant performance improvement of integrated circuits. Low power consumption and …

A system-on-chip contains various components of which memory is one of the prominent
block. As the technology is growing and portable devices are taking charge of all our digital …

The tremendous growth of the high speed Internet and data traffic has created an enormous
demand for transmission bandwidth of dense wavelength division multiplexed (DWDM) …