Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures
In this paper, a comparative study of the early growth stages of aluminum oxide (Al2O3) thin
dielectric layers deposited by thermal-(T-ALD) and plasma-enhanced atomic layer …
dielectric layers deposited by thermal-(T-ALD) and plasma-enhanced atomic layer …
Anticorrosive AlN coatings for heat exchangers in thermal energy storage systems
NT Panagiotopoulos, AG Lekatou, KA Agrafioti… - Thermal Science and …, 2023 - Elsevier
Salt hydrates are commonly used as buffer materials in thermal storage applications. One of
the major problems usually encountered is corrosion issues related with the heat exchanger …
the major problems usually encountered is corrosion issues related with the heat exchanger …
High-temperature thermal stable solar selective absorbing coating based on the dielectric-metal-dielectric structure
J Ren, D Liang, H Liu, Y Yang, A Li, Y Sun… - Materials Today …, 2023 - Elsevier
Obtaining high-temperature thermal stable solar selective absorbing coatings is a big
challenge for ultra-high temperature solar-thermal conversion applications. In this paper, a …
challenge for ultra-high temperature solar-thermal conversion applications. In this paper, a …
Predicting residual stress of aluminum nitride thin-film by incorporating manifold learning and tree-based ensemble classifier
HF Chen, YP Yang, WL Chen, PJ Wang, W Lai… - Materials Chemistry and …, 2023 - Elsevier
The optical emission spectroscopy (OES) data provide multi-featured and high-dimension
data, which exhibit rich physical phenomena. The novel unsupervised learning uniform …
data, which exhibit rich physical phenomena. The novel unsupervised learning uniform …
Structural properties of AlN films with oxygen content deposited by reactive magnetron sputtering: XRD and XPS characterization
M García-Méndez, S Morales-Rodríguez… - Surface Review and …, 2011 - World Scientific
A set of aluminium nitride (AlN) and oxidized AlN (AlNO) thin films were grown with the
technique of direct current (dc) reactive magnetron sputtering. The main purpose of this …
technique of direct current (dc) reactive magnetron sputtering. The main purpose of this …
Structural and optical properties of aluminum nitride thin films deposited by pulsed DC magnetron sputtering
RK Choudhary, P Mishra, A Biswas… - International Scholarly …, 2013 - Wiley Online Library
Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric
bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon …
bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon …
Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy
HH Lo, WL Chen, PJ Wang, W Lai, YK Fuh… - The International Journal …, 2022 - Springer
The amount of residual stress generated during the growth process of aluminum nitride
(AlN) thin films prepared by pulsed DC reactive magnetron sputtering was investigated. The …
(AlN) thin films prepared by pulsed DC reactive magnetron sputtering was investigated. The …
Cubic aluminum nitride coating through atmospheric reactive plasma nitriding
M Shahien, M Yamada, T Yasui… - Journal of thermal spray …, 2010 - Springer
Aluminum nitride is a promising material for structural and functional applications. Cubic AlN
(c-AlN) is expected to have higher thermal conductivity due to their high symmetry; however …
(c-AlN) is expected to have higher thermal conductivity due to their high symmetry; however …
Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin films
S Cho - Journal of Crystal Growth, 2011 - Elsevier
Aluminum nitride (AlN) films have been deposited on glass substrates at various nitrogen
flow ratios by rf reactive magnetron sputtering. The AlN film deposited at 10% of nitrogen …
flow ratios by rf reactive magnetron sputtering. The AlN film deposited at 10% of nitrogen …
Microstructure and mechanical properties of AlN films obtained by plasma enhanced chemical vapor deposition
G Sánchez, B Abdallah, P Tristant… - Journal of materials …, 2009 - Springer
AlN films were prepared with a microwave plasma enhanced chemical vapor deposition
reactor working at different process temperatures in order to obtain polycrystalline< 0001> …
reactor working at different process temperatures in order to obtain polycrystalline< 0001> …