Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation effects in algan/gan hemts
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
The sensitivity of GaN/AlGaN HEMTs to 1.8 MeV proton irradiation is greatly enhanced by
biasing the devices during irradiation and/or applying high field stress before irradiation. The …
biasing the devices during irradiation and/or applying high field stress before irradiation. The …
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
The responses to 1.8 MeV proton irradiation of AlGaN/GaN HEMTs grown under Ga-rich and
ammonia-rich conditions are investigated in this work. Changes in defect energy …
ammonia-rich conditions are investigated in this work. Changes in defect energy …
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN
HEMTs fabricated via two different process methods. Both positive and negative threshold …
HEMTs fabricated via two different process methods. Both positive and negative threshold …
Defect and impurity-center activation and passivation in irradiated AlGaN/GaN HEMTs
Donor-like defects are activated and acceptor-like defects are passivated when commercial
AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or …
AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or …
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs
Responses to 1.8 MeV proton irradiation and 10-keV X-ray irradiation under typical bias
conditions are investigated for AlGaN/GaN HEMTs fabricated with different types of process …
conditions are investigated for AlGaN/GaN HEMTs fabricated with different types of process …