Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the
deposition of thin films. However, several physical and chemical phenomena can occur …

As has been known for a decade, metal oxide particles can form in a single reaction of
gaseous metal chlorides with solid oxides. This is an undesirable effect in the fabrication of …

Reactions of HF with uncoated and Al and Zn oxide-coated surfaces of LiCoO2 cathodes
were studied using density functional theory. Cathode degradation caused by reaction of HF …

We examine the effect of growth temperature in the 150− 300° C range on the structural and
morphological properties of Al2O3 films deposited using atomic layer deposition, contrasting …

The difficulty of approximate density functionals in describing the energetics of Diels–Alder
reactions and dimerization of aluminum complexes is analyzed. Both of these reaction …

Atomic layer deposition (ALD) is a coating technology used to produce highly uniform thin
films. Aluminiumoxide, Al2O3, is mainly deposited using trimethylaluminium (TMA) and …

Abstract films were deposited by atomic layer deposition (ALD) using trimethylaluminum and
as precursor and oxidant, respectively, at growth temperatures ranging from room …

Published papers on atomic-scale simulation of the atomic layer deposition (ALD) process
are reviewed. The main topic is reaction mechanism, considering the elementary steps of …

Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a
solution to the current challenges in alignment that limit the development of sub-5 nm …