Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Spin transport and relaxation in germanium

K Hamaya, Y Fujita, M Yamada… - Journal of Physics D …, 2018 - iopscience.iop.org
This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

Chirality‐Induced Magnet‐Free Spin Generation in a Semiconductor

T Liu, Y Adhikari, H Wang, Y Jiang, Z Hua… - Advanced …, 2024 - Wiley Online Library
Electrical generation and transduction of polarized electron spins in semiconductors (SCs)
are of central interest in spintronics and quantum information science. While spin generation …

Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes

K Kasahara, Y Fujita, S Yamada, K Sawano… - Applied Physics …, 2014 - iopscience.iop.org
We show nonlocal spin transport in n-Ge-based lateral spin-valve devices with highly
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …

Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements

M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …

Large spin accumulation voltages in epitaxial contacts on Ge without an oxide tunnel barrier

A Spiesser, H Saito, R Jansen, S Yuasa, K Ando - Physical Review B, 2014 - APS
Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …

Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure

AS Tarasov, AV Lukyanenko, MV Rautskii… - Semiconductor …, 2019 - iopscience.iop.org
Spin accumulation effect in Fe 3 Si/p-Si structure with low boron doped silicon substrate was
found. Calculated spin lifetimes are comparable with results reported earlier but for …

Large impact of impurity concentration on spin transport in degenerate -Ge

M Yamada, Y Fujita, M Tsukahara, S Yamada… - Physical Review B, 2017 - APS
We experimentally show that the spin relaxation in degenerate n-type germanium (n+-Ge)
depends strongly on the concentration of the donor impurity (N d) at low temperatures. From …

Valley-dependent spin polarization and long-lived electron spins in germanium

A Giorgioni, E Vitiello, E Grilli, M Guzzi… - Applied Physics …, 2014 - pubs.aip.org
Spin orientation and relaxation of conduction band electrons in bulk Ge are addressed by
studying the steady-state circular polarization of the indirect gap photoluminescence (PL) at …

Spin injection and local magnetoresistance effects in three-terminal devices

O Txoperena, F Casanova - Journal of Physics D: Applied …, 2016 - iopscience.iop.org
Conceiving a simple and trustworthy method to efficiently extract the spin transport
properties of any nonmagnetic material is a long-sought goal in spintronics. This is …