Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
The electrical device characteristics of Ni/β-Ga 2 O 3 vertical Schottky barrier diodes (SBDs)
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
In this paper, we demonstrate the feasibility of fabricating vertical Schottky diodes on bulk
cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and …
cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and …
Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors
In situ current–voltage and capacitance–voltage characteristics were performed on Ni/HfO
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
H Efeoǧlu, A Turut, M Gül - Optical Materials, 2023 - Elsevier
We have investigated whether the Schottky barrier diodes (SBD) parameters such as the SB
height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n …
height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n …
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation
A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial
layers is carried out by employing in-situ electrical resistivity and cross sectional …
layers is carried out by employing in-situ electrical resistivity and cross sectional …
Enhanced photodetection performance of self-biased γ-In2Se3/p-Si heterojunction photodetectors using argon ion irradiation
Y Hase, P Kolhe, V Doiphode, A Punde… - Journal of Materials …, 2024 - Springer
In this work, γ-In2Se3 thin films were deposited on ap-type Si (p-Si) substrate using RF
magnetron sputtering. The effects of Ar+ ion irradiation on structural, optical, morphological …
magnetron sputtering. The effects of Ar+ ion irradiation on structural, optical, morphological …
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs
N Manikanthababu, C Joishi, J Biswas… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In situ and measurements were performed during the 120 MeV Au ion irradiation on the Pt/Al-
Ga 2 O 3, metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift …
Ga 2 O 3, metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift …
Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range
H Efeoǧlu, A Turut, M Gül - Journal of Electronic Materials, 2023 - Springer
We have compared the I–V–T characteristics of the metal-based Pt/n-Si and silicide-based
PtSi/n-Si Schottky barrier (SB) diodes in the temperature range of 40–320 K. The results …
PtSi/n-Si Schottky barrier (SB) diodes in the temperature range of 40–320 K. The results …
In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions
Abstract Pt/n-GaN Schottky diodes were fabricated on metal organic chemical vapor
deposition grown epitaxial GaN thin films. Temperature-dependent electrical …
deposition grown epitaxial GaN thin films. Temperature-dependent electrical …