High-voltage SiC power devices for improved energy efficiency
T Kimoto - Proceedings of the Japan Academy, Series B, 2022 - jstage.jst.go.jp
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
The road to a robust and affordable SiC power MOSFET technology
This article provides a detailed study of performance and reliability issues and trade-offs in
silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage …
silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
Mobility enhancement in heavily doped 4H-SiC (0001),(112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
The effects of a process that minimizes oxidation of SiC on the channel mobility of heavily
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …
doped 4H-SiC (0001),(11 bar 2 0) and (1 bar 1 00) metal-oxide-semiconductor field-effect …
Experimental determination of interface trap density and fixed positive oxide charge in commercial 4H-SiC power MOSFETs
S Yu, MH White, AK Agarwal - IEEE Access, 2021 - ieeexplore.ieee.org
We measure interface trap density near the conduction band edge and fixed oxide charge in
commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the …
commercial, packaged, 4H-SiC 1.2 kV planar Power MOSFETs. These traps determine the …
−10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition …
Y Fu, Y Chang, S Kono, A Hiraiwa… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the normally-OFF oxidized Si-terminated (C–Si) diamond metal–oxide–
semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on …
semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on …
Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps
P Fiorenza, M Zignale, M Camalleri, L Scalia… - Materials Science in …, 2024 - Elsevier
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide
(NO) on the properties of SiO 2/4H–SiC interfaces in n-channel lateral MOSFETs are …
(NO) on the properties of SiO 2/4H–SiC interfaces in n-channel lateral MOSFETs are …
Study of carrier mobilities in 4H-SiC MOSFETS using Hall analysis
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors
(MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even …
(MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even …
[HTML][HTML] Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
M Kaneko, H Takashima, K Shimazaki, S Takeuchi… - APL Materials, 2023 - pubs.aip.org
The impact of oxidation temperature on the formation of single photon-emitting defects
located at the silicon dioxide (SiO 2)/silicon carbide (SiC) interface was investigated …
located at the silicon dioxide (SiO 2)/silicon carbide (SiC) interface was investigated …