A review is given of what has been learned from electron paramagnetic resonance (EPR)
and localized vibrational mode (LVM) spectroscopy concerning isolated lattice vacancies …

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of
substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion …

It is widely known that photoluminescence (PL) and infrared (IR) spectroscopies are among
the experimental tools extensively used in the last decades for the study of impurities and …

This book outlines, with the help of several specific examples, the important role played by
absorption spectroscopy in the investigation of deep-level centers introduced in …

First-principles local-density formalism cluster theory is used to determine the structure of Au-
and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied …

Defect-related spin-to-photon interfaces in silicon promise the realization of quantum
repeaters by combining advanced semiconductor and photonics technologies. Recently …

Crystalline silicon (Si) is the key material of the semiconductor industry, with significant
applications for electronic and microelectronic devices. The properties of Si are affected by …

Electronic structure calculations employing hybrid functionals are used to gain insight into
the interaction of carbon (C) atoms, oxygen (O) interstitials and self-interstitials in silicon (Si) …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Experimental and theoretical techniques are used to investigate the impact of tin doping on
the formation and the thermal stability of oxygen-and carbon-related defects in electron …