This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

This critical review focuses on the solution based chemical vapour deposition (CVD) of main
group materials with particular emphasis on their current and potential applications …

Soft, flexible, and stretchable electronics are needed to transmit power and information, and
track dynamic poses in next-generation wearables, soft robots, and biocompatible devices …

Ga 2 O 3 thin films of the α-phase, that is, the corundum structure (in the trigonal system),
have been epitaxially obtained on sapphire (α-Al 2 O 3) substrates, in contrast to the strong …

β-Ga 2 O 3 thin films have been prepared on (0001) sapphire substrates by the sol-gel
method. X-ray diffraction showed that β-Ga 2 O 3 polycrystalline films were formed at heat …

The optical functions of-Ga2O3 thin films have been determined by ellipsometry from 0.74–5
eV. Several electron-beam evaporated and rf magnetron sputtered films of different …

β-Ga2O3 thin films were prepared by gallium evaporation in oxygen plasma. The crystal
orientation of the β-Ga2O3 films was studied in detail using X-ray diffraction, pole figure …

Free‐standing powder of zinc sulphide quantum particles has been synthesized using a
chemical route. X‐ray diffraction analysis shows that the diameter of the particles is∼ 21±2 …

Ga 2 O 3 films were deposited on (0001) sapphire substrates by means of pulsed laser
deposition (PLD). The influences of substrate temperature on crystal quality, surface …

β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-
two-dimensional metal–insulator–semiconductor field-effect transistors (MISFETs) were …