(52) US Cl........................................................ 427/569 (57) ABSTRACT (58) Field of
Classification Search................... 427/569 In one embodiment, a method for depositing a …

Embodiments of the invention provide methods for forming hafnium materials, such as
oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active …

6,348,376 B2 2/2002 Lim et al. 2006/0105515 6,358,829 B2 3, 2002 Yoon et al.
2006/0105557 6,372,598 B2 4/2002 Kang et al. 2007/0202254 6,399.491 B2 6, 2002 Jeon …

Methods for depositing a contact metal layer in contact struc tures of a semiconductor device
are provided. In one embodi ment, a method for depositing a contact metal layer for form ing …

Methods for forming a integrated gate dielectric layer on a substrate are provided. In one
embodiment, the method includes forming a silicon oxide layer on a substrate, plasma …

A method and apparatus for rapid thermal annealing compris ing a plurality of lamps affixed
to a lid of the chamber that provide at least one wavelength of light, a laser source extend …

US7837838B2 - Method of fabricating a high dielectric constant transistor gate using a low
energy plasma apparatus - Google Patents US7837838B2 - Method of fabricating a high …

(57) ABSTRACT Correspondence Address: PATTERSON & SHERIDAN, LLP--APPM/TX The
present invention generally describes apparatuses and 3040 POST OAKBOULEVARD …

US7645710B2 - Method and apparatus for fabricating a high dielectric constant transistor gate
using a low energy plasma system - Google Patents US7645710B2 - Method and apparatus …

The present invention generally describes apparatuses and methods used to perform an
annealing process on desired regions of a substrate. In one embodiment, pulses of …