Raman studies of crystal defects are reviewed. Raman spectroscopy is a powerful technique
and has been used widely for investigating disordered structures. The degree of disorder in …

During six months from April to September 1994, the author visited 42 laboratories in eight
different European countries involved with research in nanostructures. The scientific thrusts …

We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-
InP for carrier densities between 6× 10 16 and 1× 10 19 cm− 3. A line-shape theory based …

We demonstrate an all optical approach that can surprisingly offer the possibility of yielding
much more information than one would expect, pertinent to the carrier recombination …

Dry etching using ions can cause damage to the underlying semiconductor. This paper
discusses damage in III–V semiconductors and presents examples of etching conditions …

Dry etching is an important process for micro–and nanofabrication. Sputtering effects can
arise in two contexts within a dry–etch process. Incoming ions cause removal of volatile …

At present channeling is accepted to be the primary mechanism causing defects deep within
dry-etched material, with diffusion possibly modifying the final defect distribution. In this …

The indium containing narrow-gap III–V semiconductors InAs and InSb play an important
role for a lot of potential applications in photonic and electronic devices. Their electronic …

Polaron delocalization in layered transition-metal oxides can considerably impact their
physical properties and technological applications. Herein, we present the evidence for the …

We have studied a GaAs/AlAs periodic quantum dot array (fabricated by electron beam
lithography and reactive ion etching) using high-resolution x-ray reciprocal space mapping …