thin-film transistors (TFTs) for highly sensitive biosensing applications: a review
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature
In this paper, reliability issues of In2O5Sn (indium-tin oxide: a transparent material)
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …
TCAD RF performance investigation of transparent gate recessed channel MOSFET
In this paper, analog/RF performance and small signal behavior of Transparent Gate
Recessed Channel (TGRC) MOSFET has been investigated in terms of transconductance …
Recessed Channel (TGRC) MOSFET has been investigated in terms of transconductance …
Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications
In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Increased efficiency of 23% for CIGS solar cell by using ITO as front contact
In this paper, a CIGS material based solar cell structure is proposed. The efficiency of the
designed structure is improved by considering ITO (Indium Tin Oxide) as a front contact. The …
designed structure is improved by considering ITO (Indium Tin Oxide) as a front contact. The …
Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design
In this work, inclusion of high-k spacer on symmetric underlap S/D junctionless silicon
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …
Sub-20 nm GaAs junctionless FinFET for biosensing application
This work proposes a dielectric modulated GaAs junctionless FinFET as a biological sensor
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
Investigation of parasitic capacitances of In2O5Sn gate electrode recessed channel MOSFET for ULSI switching applications
This work discusses the capacitance–voltage (C–V) analysis and frequency dependent
capacitance of In 2 O 5 Sn (Tin Oxide) gate electrode Recessed Channel (TGRC) MOSFET …
capacitance of In 2 O 5 Sn (Tin Oxide) gate electrode Recessed Channel (TGRC) MOSFET …
Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET
A Kumar - Superlattices and Microstructures, 2017 - Elsevier
This paper discusses the impact of trench depth (Negative Junction Depth (NJD)) and gate
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
Noise and linearity analysis of recessed-source/drain junctionless Gate All Around (Re-S/D-JL-GAA) MOSFETs for communication systems
Noise becomes a critical performance for any electronic component when it is being used for
communication systems, it makes MOSFETs less effective at performing their functions in a …
communication systems, it makes MOSFETs less effective at performing their functions in a …