This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk
ZnO crystals and layers, including nanostructured and highly conductive films, excited by …

Pores in single‐crystalline semiconductors can be produced in a wide range of geometries
and morphologies, including the “nanometer” regime. Porous semiconductors may have …

Pores in single crystalline semiconductors come in many forms (eg, pore sizes from 2 nm to>
10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties …

We report on fabrication of two-dimensional metallo-semiconductor networks by using
pulsed electroplating of Pt inside electrochemically-prepared porous GaP layers with …

We report on fabrication of metal nanotubes in semiconductor nanotemplates possessing
ordered two-dimensional hexagonal arrays of pores grown in n-InP crystalline substrates …

Results of the experimental determination of the threshold voltage of pore formation for n-InP
(100) crystals with a charge-carrier density of 2.3× 10 18 cm− 3 are presented. The threshold …

It is shown that porous silicon in various geometries and morphologies can be used for
novel optical elements by combining theoretical insights with suitable porous structures and …

We propose to use a neutral electrolyte based on an aqueous solution of instead of
commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical …