Exploring neuromorphic computing based on spiking neural networks: Algorithms to hardware
Neuromorphic Computing, a concept pioneered in the late 1980s, is receiving a lot of
attention lately due to its promise of reducing the computational energy, latency, as well as …
attention lately due to its promise of reducing the computational energy, latency, as well as …
A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Challenges in materials and devices for resistive-switching-based neuromorphic computing
J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …
components of a solid-state system, which emulates a biological brain. The tutorial is …
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Numerous candidates attempting to replace Si-based flash memory have failed for a variety
of reasons over the years. Oxide-based resistance memory and the related memristor have …
of reasons over the years. Oxide-based resistance memory and the related memristor have …
[HTML][HTML] Pathways to efficient neuromorphic computing with non-volatile memory technologies
Historically, memory technologies have been evaluated based on their storage density, cost,
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch… - Journal of Applied …, 2011 - pubs.aip.org
By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM
The control and rational design of redox‐based memristive devices, which are highly
attractive candidates for next‐generation nonvolatile memory and logic applications, is …
attractive candidates for next‐generation nonvolatile memory and logic applications, is …