Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices
for transmission of radio‐frequency (RF) signals over large distances for more efficient …

A high-quality AlN epitaxial film has been grown on a Si (111) substrate by metal–organic
chemical vapor deposition through designing the AlN nucleation layer. The structure of a low …

GaN-based light-emitting diodes (LEDs) are extremely promising and highly efficient solid-
state light sources with long lifetimes. In this study, a stress-free GaN film with optimal quality …

In the van der Waals epitaxy of III-nitride semiconductor materials, graphene plays an
increasingly important role. In this work, to improve the quality of the gallium nitride (GaN) …

We report the effects of the growth temperature on the structural and electrical properties of
the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray …

Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and
other electronic devices due to its wide band-gap and superb optoelectronic performance …

The gate leakage mechanism for InAlGaN/GaN high electron mobility transistors (HEMTs) is
systematically studied using temperature‐dependent gate current–voltage characteristics …

隨著現今電子設備和通信系統的進步, 對於高頻, 高功率和高電壓的要求也提高,
而第一代半導體(Si, Ge) 和第二代半導體(GaAs, InP) 的溫度, 頻率和功率也已經達到極限 …

Gallium nitride (GaN), widely known as a wide bandgap semiconductor material, has been
mostly employed in high power devices, light emitting diodes (LED), and optoelectronic …

This paper aims to characterize two high electron mobility transistors analyzed with sapphire
and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold …