A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band
T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …
data-intensive applications in modern society. Integrated millimeter-wave systems with …
Broadband 300-GHz power amplifier MMICs in InGaAs mHEMT technology
In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave
monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The …
monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The …
Broadband 400-GHz InGaAs mHEMT transmitter and receiver S-MMICs
The modeling, design, and experimental evaluation of both a 400-GHz transmitter and
receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this …
receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this …
Broadband 400 GHz on-chip antenna with a metastructured ground plane and dielectric resonator
The analysis, modeling, design, simulation, and experimental evaluation of a 400 GHz on-
chip antenna is presented, with a novel combination of metastructures, a microstrip patch, a …
chip antenna is presented, with a novel combination of metastructures, a microstrip patch, a …
Broadband InGaAs mHEMT THz Transmitters and Receivers
We describe THz amplifier and front-end modules that have been developed based on an
InGaAs metamorphic HEMT (mHEMT) technology for THz-wireless communication …
InGaAs metamorphic HEMT (mHEMT) technology for THz-wireless communication …
Millimeter-Wave Donor–Acceptor-Doped DpHEMT
AB Pashkovskii, SA Bogdanov… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we present GaAs millimeter-wave pseudomorphic high-electron-mobility
transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure with an In 0.22 …
transistor (pHEMT) using sophisticated AlGaAs-InGaAs-GaAs heterostructure with an In 0.22 …
A Pulsed Power Supply Based on a Series Pulsed Power Compensator for Low Pulse Repetition Frequency Applications
Y Xu, X Ruan, Y Meng, L Xiao - IEEE Transactions on Power …, 2024 - ieeexplore.ieee.org
The power supply of the T/R modules in active phased array radar is a kind of pulsed power
supply (PPS). In case of low pulse repetition frequency (PRF), an active pulsed power …
supply (PPS). In case of low pulse repetition frequency (PRF), an active pulsed power …
Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures
E Kablukova, KK Sabelfeld, D Protasov… - Monte Carlo Methods …, 2023 - degruyter.com
In this paper we develop a stochastic simulation algorithm for electron transport in a DA-
pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in …
pHEMT heterostructure. Mathematical formulation of the problem of electron gas transport in …
670-GHz cascode circuits based on InGaAs metamorphic high-electron-mobility transistors
This article reports the development of high-gain cascode amplifier circuits in the frequency
range around 670 GHz. The cascode circuits are based on a 35-nm metamorphic high …
range around 670 GHz. The cascode circuits are based on a 35-nm metamorphic high …
Investigation of compact power amplifier cells at THz frequencies using InGaAs mHEMT technology
In this paper a design approach for compact power amplifier cells at frequencies around and
above 300 GHz is presented, using a 35nm InGaAs mHEMT technology. Up to 8-finger …
above 300 GHz is presented, using a 35nm InGaAs mHEMT technology. Up to 8-finger …