Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

[HTML][HTML] Oxygen vacancies: The (in) visible friend of oxide electronics

F Gunkel, DV Christensen, YZ Chen, N Pryds - Applied physics letters, 2020 - pubs.aip.org
Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

Analog memristive synapse based on topotactic phase transition for high-performance neuromorphic computing and neural network pruning

X Mou, J Tang, Y Lyu, Q Zhang, S Yang, F Xu, W Liu… - Science …, 2021 - science.org
Inspired by the human brain, nonvolatile memories (NVMs)–based neuromorphic computing
emerges as a promising paradigm to build power-efficient computing hardware for artificial …

Bidirectional All‐Optical Synapses Based on a 2D Bi2O2Se/Graphene Hybrid Structure for Multifunctional Optoelectronics

CM Yang, TC Chen, D Verma, LJ Li… - Advanced Functional …, 2020 - Wiley Online Library
Neuromorphic computing has been extensively studied to mimic the brain functions of
perception, learning, and memory because it may overcome the von Neumann bottleneck …

Complex oxides for brain‐inspired computing: A review

TJ Park, S Deng, S Manna, ANMN Islam… - Advanced …, 2023 - Wiley Online Library
The fields of brain‐inspired computing, robotics, and, more broadly, artificial intelligence (AI)
seek to implement knowledge gleaned from the natural world into human‐designed …

An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing

J Rao, Z Fan, L Hong, S Cheng, Q Huang, J Zhao… - Materials Today …, 2021 - Elsevier
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …

Topotactic transformation of single crystals: From perovskite to infinite-layer nickelates

P Puphal, YM Wu, K Fürsich, H Lee, M Pakdaman… - Science …, 2021 - science.org
Topotactic transformations between related crystal structures are a powerful emerging route
for the synthesis of novel quantum materials. Whereas most such “soft chemistry” …

[HTML][HTML] Progress in atomic-resolution aberration corrected conventional transmission electron microscopy (CTEM)

KW Urban, J Barthel, L Houben, CL Jia, L Jin… - Progress in Materials …, 2023 - Elsevier
Transmission electron microscopy is an indispensable tool in modern materials science. It
enables the structure of materials to be studied with high spatial resolution, and thus makes …

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High‐Density Resistive Switching Memory

J Tian, H Wu, Z Fan, Y Zhang, SJ Pennycook… - Advanced …, 2019 - Wiley Online Library
Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile
memory technologies. Recently, a novel class of transition metal oxides (TMOs), which …