Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …

In this letter, the atomic layer deposited (ALD) resistive random access memory (RRAM)
device with Au/Al 2 O 3/ZnO/FTO structure (ox-RRAM) exhibiting bipolar characteristics is …

Switching voltage and time statistics of HfO 2-based one transistor-one resistor structures
are investigated with the aim of clarifying the underlying physical mechanism that governs …

In this paper, the transition rate (TR) from the high-resistance state to the low-resistance
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …

Thin films containing either multilayer ZrO2: Al2O3 structures or ZrO2 deposited on ZrxAlyOz
buffer layers were characterized. The films were grown by atomic layer deposition (ALD) at …

Resistive Random Access Memory (RRAM) is considered one of the most promising
candidates for big data storage. By using atomic layer deposition and magnetron sputtering …

Because of the atomic nature of the system under study, an estimation of the temperature of
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be …

Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …