On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
Failure mechanisms driven reliability models for power electronics: A review
OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …
often results in to increase in operational parameters such as current density, temperature …
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …
their experimental data using a compact representation without dealing with the …
The effect of the top electrode on the switching behavior of bipolar Al2O3/ZnO RRAM
KB Jinesh - Microelectronic Engineering, 2021 - Elsevier
In this letter, the atomic layer deposited (ALD) resistive random access memory (RRAM)
device with Au/Al 2 O 3/ZnO/FTO structure (ox-RRAM) exhibiting bipolar characteristics is …
device with Au/Al 2 O 3/ZnO/FTO structure (ox-RRAM) exhibiting bipolar characteristics is …
Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices
A Rodriguez-Fernandez, C Cagli… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Switching voltage and time statistics of HfO 2-based one transistor-one resistor structures
are investigated with the aim of clarifying the underlying physical mechanism that governs …
are investigated with the aim of clarifying the underlying physical mechanism that governs …
Study on the connection between the set transient in RRAMs and the progressive breakdown of thin oxides
FL Aguirre, A Rodriguez-Fernandez… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …
Structure and electrical properties of zirconium-aluminum-oxide films engineered by atomic layer deposition
J Merisalu, T Jõgiaas, TD Viskus, A Kasikov, P Ritslaid… - Coatings, 2022 - mdpi.com
Thin films containing either multilayer ZrO2: Al2O3 structures or ZrO2 deposited on ZrxAlyOz
buffer layers were characterized. The films were grown by atomic layer deposition (ALD) at …
buffer layers were characterized. The films were grown by atomic layer deposition (ALD) at …
[HTML][HTML] HfO2-based resistive random access memory with an ultrahigh switching ratio
J Pan, H He, Q Huang, Y Gao, Y Lin, R He… - Journal of Applied …, 2024 - pubs.aip.org
Resistive Random Access Memory (RRAM) is considered one of the most promising
candidates for big data storage. By using atomic layer deposition and magnetron sputtering …
candidates for big data storage. By using atomic layer deposition and magnetron sputtering …
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
Because of the atomic nature of the system under study, an estimation of the temperature of
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be …
the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be …
[HTML][HTML] Failure Mechanisms Driven Reliability Models for Power Electronics: A Review
OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …
often results in to increase in operational parameters such as current density, temperature …