A FinFET (= Fin Field Effect Transistor) may provide a proper drive current and may avoid so-
called short-channel effects that limit the performance of a FET. US Pat. No. 6,413,802 …

4,906,589 A 3, 1990 Chao 4,996,574 A 2f1991 Shirasaki et al. 5,124,777 A 6, 1992 Lee
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …

(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
surface and a first and second laterally opposite sidewalls as formed on an insulating …

(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
Surface and a first and second laterally opposite sidewalls as formed on an insulating …

A nonplanar semiconductor device and its method of fabrication is described. The nonplanar
semiconductor device includes a semiconductor body having a top surface opposite a …

Described herein are a device utilizing a gate electrode material with a single work function
for both the pMOS and nMOS transistors where the magnitude of the transistor threshold …

US6970373B2 - Method and apparatus for improving stability of a 6T CMOS SRAM cell -
Google Patents US6970373B2 - Method and apparatus for improving stability of a 6T CMOS …

The present invention is a semiconductor device comprising a semiconductor body having a
top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is …

A transistor (10) is formed having three separately controllable gates (44, 42, 18). The three
gate regions may be electrically biased differently and the gate regions may have different …

A method of a bulk tri-gate transistor having stained enhanced mobility and its method of
fabrication. The present invention is a nonplanar transistor having a strained enhanced …