На основе анализа публикаций последних лет для системы Ge-на-Si приводятся
устоявшиеся представления о механизмах образования германиевых островков …

The generally accepted notions about the formation mechanisms for germanium islands with
nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent …

Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …

Two-dimensional alignment of Ge islands is obtained by molecular beam epitaxy of Ge on
lithographically patterned Si (001) surfaces composed of periodic arrays of square Si mesas …

The dewetting phenomenon that occurs during annealing of Ge films after their deposition
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …

This paper gives a brief review of our recent work on a new method of nanoscale pattern
formation of thin oxide film on Si substrate by using a scanning tunnelling microscope (STM) …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

The surface morphology of Ge layers grown by Ge deposition on the Si (001) and Si (111)
surfaces covered with ultrathin SiO 2 films is studied with scanning tunneling microscopy. It …

We use scanning reflection electron microscopy (SREM) to study three-dimensional Ge
island formation on the Si (111) surface at coverages near the transition from two …