TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

The concept of dual metal and double gate in Vertical TFET is presented to show the
improvement of DC as well as analog/RF device performance standards due to enhanced …

A new FoM to investigate a carefully engineered Schottky barrier (SB) TFET by accounting
for dc power consumption, and silicon area, which are the key consideration for energy …

In this paper, we propose a novel germanium source based dual metal gate tunneling field
effect transistor (VGeDMG). Design of device effectively suppresses lateral tunneling current …

In this paper, to solve an important issue of low ON-state current in the nickel silicide (NiSi)
metal source/drain Schottky barrier (SB) MOSFET (SBMOS), we have reported a novel …

In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …

In this paper, a new structure for a silicon on insulator Schottky barrier MOSFET (SOI SB-
MOSFET) has been proposed. The simulated device is calibrated with experimental result …

This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET)
as label free biosensor applications. In a proposed device, we have created a nanogap …

In this article, we propose a highly sensitive vertically plug-in source drain contacts high
Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field …

In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field
effect transistor with high on-state current based on high Schottky barrier plug-in source …