Mask assignment and DSA grouping for DSA-MP hybrid lithography for sub-7 nm contact/via holes
Directed self assembly (DSA) is a very promising candidate for the sub-7 nm technology
nodes. To print such small dimensions, multiple patterning (MP) is likely to be used to print …
nodes. To print such small dimensions, multiple patterning (MP) is likely to be used to print …
Double-patterning friendly grid-based detailed routing with online conflict resolution
Double patterning lithography (DPL) is seen as one of the most promising solutions for new
technology nodes such as 32nm and 22nm. However, DPL faces the challenges of handling …
technology nodes such as 32nm and 22nm. However, DPL faces the challenges of handling …
非對稱蕭特基能障薄膜電晶體與浮停閘極記憶體元件之製作與特性分析
林歷樺, 林鴻志, 黃調元 - 2010 - ir.lib.nycu.edu.tw
在本論文中, 我們利用一種新穎且低成本的雙重微影成像技術成功地製作出非對稱蕭特基能障
薄膜電晶體. 這個方法需要利用I-line 光學步進機進行兩次的微影曝光以及後續的蝕刻步驟來 …
薄膜電晶體. 這個方法需要利用I-line 光學步進機進行兩次的微影曝光以及後續的蝕刻步驟來 …
Split-it!: from litho etch litho etch to self-aligned double patterning decomposition
Double Patterning (DP) is still the most viable lithography option for sub-22nm nodes. The
two main types of DP are Litho Etch Litho Etch (LELE) and Self-Aligned Double Patterning …
two main types of DP are Litho Etch Litho Etch (LELE) and Self-Aligned Double Patterning …
[图书][B] Co-optimization of Restrictive Patterning Technologies and Design
YAZ Badr - 2017 - search.proquest.com
As the semiconductor industry strives to find novel technology scaling methods, the
advanced technologies (sub-15nm) have become restrictive to the design. The restrictions …
advanced technologies (sub-15nm) have become restrictive to the design. The restrictions …