The high switching speed of SiC mosfet s is limited by the coupling noise in bridge-leg
configurations. Conventional methods focus on the noise introduced by the gate–drain …

Power MOSFETs are crucial devices in a multitude of everyday applications that require an
extended lifetime. Inadequate design of these devices may cause premature failures. In this …

Power metal-oxide–semiconductor field-effect transistors (MOSFETs) play a vital role in
numerous everyday applications that require an extended lifetime. Therefore, it is important …

To achieve higher power density at a reduced cost, it is more advantageous to utilize the
inherent body diode found in silicon carbide MOSFETs (SiC MOSFETs) rather than relying …

Gate open-circuit failure caused by cracking and liftoff of gate bond wires has been
demonstrated to be a new failure mode of silicon carbide (SiC) metal-oxide-semiconductor …

This letter proposed an embedded silicon carbide (SiC) power module with low parasitic
inductance and low thermal resistance for high-frequency and high-temperature …

There is a continuous demand for high power, high frequency, high reliability dc-dc
converters in various applications such as medium voltage dc (MVDC) distribution systems …

Gate oxide degradation under dynamic gate stress has been demonstrated as a reliability
issue for SiC MOSFETs recently. Investigating the influence of dynamic drain-source voltage …

In this article, a new crosstalk phenomenon is clarified for the drivers of power switches in
current-source inverter (CSI). The key is to develop a high-frequency equivalent circuit for …

In order to monitor the operating status of silicon carbide power mosfet s, an in-circuit real-
time drain current extraction technique based on packaging parasitic parameters is …