Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.
We report the observation of an atomic like behavior from T= 4.2 K up to room temperature in
n-and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the …
n-and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the …
High performance of fin-shaped tunnel field-effect transistor SONOS nonvolatile memory with all programming mechanisms in single device
YR Jhan, YC Wu, HY Lin, MF Hung… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper demonstrates a silicon-oxide-nitrideoxide-silicon (SONOS) nonvolatile memory
(NVM) with fin-shaped polycrystalline silicon channel tunnel field-effect transistor (TFET). It …
(NVM) with fin-shaped polycrystalline silicon channel tunnel field-effect transistor (TFET). It …
High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory
MF Hung, YC Wu, ZY Tang - Applied Physics Letters, 2011 - pubs.aip.org
Nonvolatile memory (NVM) that is based on gate-all-around (GAA) and polycrystalline
silicon (poly-Si) nanowires structure with silicon nanocrystals (NCs) as the storage nodes is …
silicon (poly-Si) nanowires structure with silicon nanocrystals (NCs) as the storage nodes is …
Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation
YR Jhan, YC Wu, HY Lin, MF Hung - Applied Physics Letters, 2013 - pubs.aip.org
This work demonstrates the feasibility of a charge-trapping nonvolatile memory based on Pi-
gate polycrystalline silicon tunneling field-effect transistor, which has a silicon-oxide-nitride …
gate polycrystalline silicon tunneling field-effect transistor, which has a silicon-oxide-nitride …
Comparison with nitride interface defects and nanocrystals for charge trapping layer nanowire gate-all-around nonvolatile memory performance
YR Lin, YW Chiang, YH Lin… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper demonstrates novel silicon-oxide-nitride-nitride-oxide-silicon (SONNOS) and
silicon-oxide-nanocrystals-oxide-silicon (SOncOS) nonvolatile memory (NVM) that is based …
silicon-oxide-nanocrystals-oxide-silicon (SOncOS) nonvolatile memory (NVM) that is based …
Specific distribution of the light captured by silver nanowire
Y Li, Y Luo, W Liu, M Cui, J Kumar, B Jiang, L Chu… - Optics …, 2017 - opg.optica.org
The silver nanowire (AgNW) has excellent light capture ability, showing great prospects in
many fields. Based on discrete dipole approximation simulations, it is found that the …
many fields. Based on discrete dipole approximation simulations, it is found that the …
Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices
JR Barker, A Martinez - Journal of Physics: Condensed Matter, 2018 - iopscience.iop.org
Efficient analytical image charge models are derived for the full spatial variation of the
electrostatic self-energy of electrons in semiconductor nanostructures that arises from …
electrostatic self-energy of electrons in semiconductor nanostructures that arises from …
Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ/SiO2 gate stacks
We investigate remote surface roughness (RSR) scattering by the SiO 2/HfO 2 interface in
Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We …
Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We …
Substrate polarization effect on the band gaps of one-dimensional semiconducting atomic wires
AJ Simbeck, NA Lanzillo, N Kharche… - Computational Materials …, 2016 - Elsevier
The dielectric screening induced modulation of the electronic structure of model SiH 2 and
GeH 2 one-dimensional atomic wires is investigated using graphene as a prototypical …
GeH 2 one-dimensional atomic wires is investigated using graphene as a prototypical …
Remotely screened electron-impurity scattering model for nanoscale MOSFETs
The ionized impurities within the channel of nanoscale MOSFETs are shown to be strongly
remotely screened by the close proximity of the highly doped, degenerate source and drain …
remotely screened by the close proximity of the highly doped, degenerate source and drain …