Magnetoelectric (ME) effect is a type of cross-coupling between unconjugated physical
quantities, such as the interplay between magnetization and electric field. The ME effect …

Antiferromagnets are normally thought of as materials with compensated magnetic
sublattices. This adds to their technological advantages but complicates readout of the …

Antiferromagnetic states with no stray magnetic fields can enable high-density ultra-fast
spintronic technologies. However, the detection and control of antiferromagnetic Néel …

Electrically controllable antiferromagnets will play a prominent role in the development of
future spintronics. These materials offer a way to realize innovative low-energy …

We show, by solving Maxwell's equations, that an electric charge on the surface of a slab of
a linear magnetoelectric material generates an image magnetic monopole below the surface …

Abstract Development of antiferromagnetic/ferrimagnetic materials has been an area of
active pursuit to advance the antiferromagnetic/ferrimagnetic spintronics. In this paper, we …

Magnetoelectric (ME) switching energy is the most important aspect in the practical
application of antiferromagnetic (AFM) Cr2O3‐based perpendicular exchange‐coupling …

Control of magnetic states by external factors has garnered a mainstream status in spintronic
research for designing low power consumption and fast‐response information storage and …

We report on the inhomogeneous electric field response of the magnetization in a La 1− x Sr
x MnO 3 (LSMO) film on a ferroelectric [Pb (Mg 1/2 Nb 2/3) O 3] 1− x-[PbTiO 3] x (PMN-PT) …

We investigated perpendicular exchange bias switching by a magnetoelectric field cooling
process in a Pt-spacer-inserted Cr 2 O 3/Co exchange-coupled system exhibiting small Cr 2 …