[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
SiGeSn ternaries for efficient group IV heterostructure light emitters
N von den Driesch, D Stange, S Wirths, D Rainko… - Small, 2017 - Wiley Online Library
SiGeSn ternaries are grown on Ge‐buffered Si wafers incorporating Si or Sn contents of up
to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high …
to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high …
Composition-induced influence on the electronic band structure, optical and thermoelectric coefficients of the highly mismatched GaNSb alloy over the entire range: a …
Capable of achieving wide control over energy band gap and following optoelectronic
properties; the highly mismatched alloys (HMAs) are considered to be promising materials …
properties; the highly mismatched alloys (HMAs) are considered to be promising materials …
Codoping induced enhanced ferromagnetism in diluted magnetic semiconductors
AN Andriotis, M Menon - Journal of Physics: Condensed Matter, 2021 - iopscience.iop.org
The experimentally observed d 0-magnetism and its subsequent attribution to the presence
of structural and topological defects has opened the way for engineering the magnetic …
of structural and topological defects has opened the way for engineering the magnetic …
High-pressure phases of lead chalcogenides
Ab initio electronic structures have been carried out to find the pressure-induced structural
phase transitions of lead chalcogenides (PbS, PbSe and PbTe) compounds. The zinc …
phase transitions of lead chalcogenides (PbS, PbSe and PbTe) compounds. The zinc …
New Visible Light Absorbing Materials for Solar Fuels, Ga(Sbx)N1−x
S Sunkara, VK Vendra, JB Jasinski… - Advanced …, 2014 - Wiley Online Library
However, the current bottleneck in the practical implementation of this technology is
discovering a material that will simultaneously satisfy a number of criteria required for …
discovering a material that will simultaneously satisfy a number of criteria required for …
Lattice dynamics study of lead chalcogenides
First principal calculations have been performed to study the structural and lattice-dynamical
properties for lead chalcogenides compounds: PbS, PbSe and PbTe. The ground-states …
properties for lead chalcogenides compounds: PbS, PbSe and PbTe. The ground-states …
Structural, dynamical and thermodynamical stability of Cd1-xZnxS ternary systems
Cd 1-x Zn x S alloys are currently explored as one class of the most promising for producing
hydrogen energy under visible-light irradiation. Here, using an ab intio evolutionary …
hydrogen energy under visible-light irradiation. Here, using an ab intio evolutionary …
Electronic band structure of highly mismatched GaN1− xSbx alloys in a broad composition range
In this letter, we study the optical properties of GaN 1− x Sb x thin films. Films with an Sb
fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant …
fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant …