Large-scale hexagonal boron nitride (h-BN) single crystals are highly desirable not only as
the substrate or dielectric for van der Waals heterostructures, but also the promising …

Experimental studies of intentionally doped impurities for the understanding of conductivity
control in hexagonal boron nitride (h-BN) ultrawide bandgap (UWBG) semiconductor are …

X-ray detectors based on conventional semiconductors with large atomic numbers are
suffering from the poor stability under a high dose rate of ionizing irradiation. In this work, we …

Hexagonal boron nitride (hBN) is promising for applications in neutron detection and
quantum sensing. Here we created spin-dependent luminescence defects in hBN using 50 …

Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG)
semiconductor (Eg~ 6 eV). The crystal growth technologies for producing semi-bulk …

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge
impact in the field of power electronics. In the III-nitride family, the crystal growth and use of …

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical
resistivities. This property presents not only challenges in probing their electrical transport …

Hexagonal boron nitride (h-BN) has attracted considerable interest as an ultrawide bandgap
(UWBG) semiconductor. Experimental studies focused on the detailed near band-edge …

We report an in situ carbon doping method for fabricating p-type hexagonal boron nitride
thin films with a halide vapor phase epitaxy system by introducing bis (cyclopentadienyl) …